power transistors 1 publication date: april 2003 sjd00180bed 2sd1264, 2sd1264a silicon npn triple diffusion planar type for low-frequency power amplification for tv vertical deflection output complementary to 2sb0940, 2s0940a features ? high collector-emitter voltage (base open) v ceo ? large collector power dissipation p c ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe1 60 to 140 100 to 240 parameter symbol rating unit collector-base voltage (emitter open) v cbo 200 v collector-emitter voltage 2sd1264 v ceo 150 v (base open) 2sd1264a 180 emitter-base voltage (collector open) v ebo 6v collector current i c 2a peak collector current i cp 3a collector power t c = 25 cp c 30 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 50 a, i e = 0 200 v collector-emitter voltage 2sd1264 v ceo i c = 5 ma, i b = 0 150 v (base open) 2sd1264a 180 emitter-base voltage (collector open) v ebo i e = 500 a, i c = 06 v base-emitter voltage v be v ce = 10 v, i c = 400 ma 1.0 v collector-base cutoff current (emitter open) i cbo v cb = 200 v, i e = 050 a emitter-base cutoff current (collector open) i ebo v eb = 4 v, i c = 050 a forward current transfer ratio h fe1 * v ce = 10 v, i c = 150 ma 60 240 ? h fe2 v ce = 10 v, i c = 400 ma 50 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 1.0 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
2sd1264, 2sd1264a 2 sjd00180bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2w) (1) (2) (3) (4) 024 420 816 12 0 1.2 1.0 0.8 0.6 0.4 0.2 collector current i c (a) collector-emitter voltage v ce (v) i b =7ma 6ma 5ma 4ma 3ma 2ma 1ma t c =25?c 0 1.2 1.0 0.8 0.6 0.4 0.2 0 1.2 0.2 1.0 0.4 0.8 0.6 base-emitter voltage v be (v) collector current i c (a) t c =100?c 25?c ?5?c 0.01 0.1 1 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 t c =100?c 25?c ?5?c 0.01 0.1 1 10 1 10 10 2 10 3 10 4 forward current transfer ratio h fe collector current i c (a) v ce =10v 25?c ?5?c t c =100?c 0.01 0.1 1 10 0.1 1 10 100 1 000 collector current i c (a) transition frequency f t (mhz) v ce =5v f=1mhz t c =25?c 0.001 1 0.01 0.1 1 10 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=5ms t=1ms dc t=0.5ms 2sd1264 2sd1264a 10 ? 2 10 ? 1 10 1 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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